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| FDZ294N July 2005 FDZ294N N-Channel 2.5 V Specified PowerTrench(R) BGA MOSFET General Description Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space This BGA MOSFET embodies a and RDS(ON). breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features * 6 A, 20 V RDS(ON) = 23 m @ VGS = 4.5 V RDS(ON) = 34 m @ VGS = 2.5 V * Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 * Ultra-thin package: less than 0.85mm height when mounted to PCB * Outstanding thermal transfer characteristics: 4 times better than SSOT-6 * Ultra-low Qg x RDS(ON) figure-of-merit * High power and current handling capability. Applications * Battery management * Battery protection D GATE G Index slot Bottom S Top Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 12 (Note 1a) Units V V A W C 6 10 1.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 72 C/W Package Marking and Ordering Information Device Marking E (c)2005 Fairchild Semiconductor Corporation Device FDZ294N Reel Size 7" Tape width 8mm Quantity 3000 units FDZ294N Rev. B3 (W) FDZ294N Electrical Characteristics Symbol Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage. (Note 2) TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS = 0 V, ID = 250 A 20 12 1 100 V mV/C A nA ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 4.5 V, ID = 6 A, ID = 5A, VGS = 2.5 V, VGS = 4.5 V, ID = 6 A, TJ=125C VDS = 5 V, ID = 6 A 0.6 0.9 -3 18 26 24 24 1.5 V mV/C 23 34 31 m gFS S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 670 172 105 pF pF pF f = 1.0 MHz 1.4 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 8 5 14 6 16 10 25 12 10 ns ns ns ns nC nC nC VDS = 10V, VGS = 4.5 V ID = 6 A, 7 1.4 2.1 Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design. a) 72C/W when 2 mounted on a 1in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB b) 157C/W when mounted on a minimum pad of 2 oz copper Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.4 A (Note 2) 1.4 0.7 15 4 1.2 A V nS nC IF = 6 A, diF/dt = 100 A/s 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDZ294N Rev. B3 (W) FDZ294N Typical Characteristics 35 2.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.5V 3.0V 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 2.5 3 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 VDS, DRAIN-SOURCE VOLTAGE (V) VGS = 2.0V 2.5V 2.5V 3.0V 3.5V 4.5V 2.0V 0 5 10 ID, DRAIN CURRENT (A) 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 6A VGS = 4.5V 1.4 ID =3A 0.07 0.06 0.05 1.2 TA = 125oC 0.04 0.03 1 0.8 TA = 25oC 0.02 0.01 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 35 30 ID, DRAIN CURRENT (A) 25 125oC 20 15 10 5 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55oC 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ294N Rev. B3 (W) FDZ294N Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 7 8 Qg, GATE CHARGE (nC) ID = 6A VDS = 5V 1000 10V 15V CAPACITANCE (pF) 900 800 700 600 500 400 300 200 100 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) CRSS COSS CISS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 20 ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1ms 1s 10s DC 0.1 VGS = 4.5V SINGLE PULSE RJA = 157oC/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) o 15 SINGLE PULSE RJA = 157C/W TA = 25C 10ms 100ms 1 10 5 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 157 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ294N Rev. B3 (W) FDZ294N Dimensional Outline and Pad Layout FDZ294N Rev. B3 (W) FDZ294N Rev. B3 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 FDZ294N Rev. B3 (W) FDZ294N Rev. B3 (W) |
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